Trendforce has identified ten major technology trends for 2022, from 3nm
The foundry industry moves to 3nm and gate-all-round manufacturing processes
TSMC and Samsung are expected to announce production of their respective 3nm process technologies in 2H22. While the former will continue to adopt the FinFET architecture that it has been using since the 1Xnm node, Samsung will for the first time use its own implementation of GAAFET, called MBCFET (multi-bridge channel field-effect transistor) for its 3nm process technology.
The GAAFET design reduces leakage currents by giving the gate a greater degree of control over the channel. The first batch of products mass produced at the 3nm node in 2H22 is expected to be high-performance computing and smartphone chips.
DDR5 DRAM to enter mass production, NAND Flash stacking to exceed 200 layers
Samsung, SK Hynix, and Micron will start mass production of DDR5 DRAM components while increasing the penetration of LPDDR5 DRAM in the smartphone market in response to demand for 5G smartphones. With memory speed in excess of 4800Mbps, DDR5 DRAM can improve computing performances and low power consumption.
Intel will release CPUs that support DDR5 memory with Alder Lake for the personal computers and Eagle Strea for server computers. DDR5 is expected to take 10 to 15 percent of total bit output by the end of 2022. Samsung and SK Hynix will begin production of 1-alpha nm process technologies using extreme ultraviolet lithography.
Suppliers of NAND flash will migrate from 176L in 2021 to 200L and above in 2022 although with component densities remaining at 512Gbyte and 1Tbyte.
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